ec 73 2 3 3 6 20 v 4 . 2 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 1 of 4 5c31n-rev.f001 description the ec732336 uses advanced trench technology to pro vide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable fo r use as a battery protection or in other switching application. features and benefits v ds = 20v,i d = 4.2a r ds(on) < 80m @ v gs =2.5v r ds(on) < 45m @ v gs =4.5v high power and current handing capability lead free product is acquired surface mount package application battery protection load switch power management package marking and ordering information absolute maximum ratings (t a =25 unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v i d 4.2 a drain current-continuous@ current-pulsed (note 1) i dm 33 a maximum power dissipation pd 1.25 w operating junction and storage temperature range t j ,t stg -55 to 150 thermal resistance thermal resistance,junction-to-ambient (note 2) r ja 140 /w device marking device device package 2336 EC732336B1R sot23
ec 73 2 3 3 6 20 v 4 . 2 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 2 of 4 5c31n-rev.f001 electrical characteristics (t a =25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v i d =250 a 20 v zero gate voltage drain current i dss v ds =20v,v gs =0v 1 a gate-body leakage current i gss v gs =12v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d =250 a 0.6 1.2 v v gs =2.5v, i d =3.6a 50 80 m drain-source on-state resistance r ds(on) v gs =4.5v, i d =4.2a 35 45 m forward transconductance g fs v ds =10v,i d =4a 8 s dynamic characteristics (note4) input capacitance clss 700 pf output capacitance coss 100 pf reverse transfer capacitance crss v ds =15v,v gs =0v, f=1.0mhz 90 pf switching characteristics (note 4) turn-on delay time td(on) 7 ns turn-on rise time tr 50 ns turn-off delay time td(off) 26 ns turn-off fall time tf v dd =10v,i d =3.6a v gs =4.5v,r gen =6 r=2.8 10 ns total gate charge qg 9 nc gate-source charge qgs 2 nc gate-drain charge qgd v ds =10v,i d =4.2a, v gs =4.5v 1.8 nc drain-source diode characteristics diode forward voltage (note 3) v sd v gs =0v,i s =1.3a 1.2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300 s, duty cycle 2%. 4. guaranteed by design, not subject to production te sting.
ec 73 2 3 3 6 20 v 4 . 2 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 3 of 4 5c31n-rev.f001 typical electrical and thermal characteristics figure 1:switching test circuit figure 2:switching waveforms fi gure 3 power dissipation
ec 73 2 3 3 6 20 v 4 . 2 a n - channel mos fet e-cmos corp. ( www.ecmos.com.tw ) page 4 of 4 5c31n-rev.f001
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